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20mm Molybdenum Sputtering Targets For The Semiconductor Industry Molybdenum Target Molybdenum Disc molybdenum products

Place of Origin China
Brand Name PRM
Certification ISO9001
Model Number custom
Minimum Order Quantity 1kg
Price $50~100/kg
Packaging Details Plywood case
Delivery Time 7~10 work days
Payment Terms T/T
Supply Ability 2000kgs/month

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Product Details
Name Molybdenum Sputtering Targets For The Semiconductor Industry Material Molybdenum And Molybdenum Alloy
Purity 99.95% Density 10.2g/cm3
Thickness <20mm Diameter <300mm
Surface Polished Standard ASTM B386
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20mm Molybdenum Sputtering Targets

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Polished Molybdenum Sputtering Targets

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99.95% molybdenum sputtering

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Product Description

Molybdenum Sputtering Targets For The Semiconductor Industry

 

1. Description Of Molybdenum Sputtering Targets For The Semiconductor Industry:

 

Molybdenum is a versatile refractory metal with outstanding mechanical qualities, a low coefficient of expansion, strong thermal conductivity, and exceptionally high electrical conductivity at high temperatures. There are numerous combinations that can be used as sputtering targets, including pure molybdenum targets, molybdenum titanium targets, molybdenum tantalum targets, and molybdenum alloy targets (such as TZM plate).

 

The materials used for semiconductors include pure metal targets such as tungsten, molybdenum, niobium, titanium, and silicon, additionally to substances like oxides or nitrides. As crucial as the deposition operating parameters that engineers and scientists perfect throughout the coating process are the material selection procedure.

 

2. Size Of Molybdenum Sputtering Targets For The Semiconductor Industry:

 

Thickness : <20mm

Diameter: <300mm

Surface: Polished

Standard: ASTM B386

 

Other size can be processed according to customer's drawing.

 

20mm Molybdenum Sputtering Targets For The Semiconductor Industry Molybdenum Target Molybdenum Disc molybdenum products 020mm Molybdenum Sputtering Targets For The Semiconductor Industry Molybdenum Target Molybdenum Disc molybdenum products 1

 

3. Chemical Content  Of Molybdenum Sputtering Targets For The Semiconductor Industry:

 

Quantitative analysis
Element Ni Mg Fe Pb Al Bi Si Cd Ca P
Concentration(%) 0.003 0.002 0.005 0.0001 0.002 0.0001 0.002 0.0001 0.002 0.001
Element C O N Sb Sn          
Concentration(%) 0.01 0.003 0.003 0.0005 0.0001          
Purity(Metallic Base) Mo≥99.95%
Element Ni Mg Fe Pb Al Bi Si Cd P
Concentration(%) 0.0014 <0.0001 0.0047 <0.0001 0.0002 <0.0001 <0.001 <0.001 <0.001
Element C N Sb Sn Cu        
Concentration(%) 0.0021 0.03 <0.0001 <0.0001 <0.0005        
Purity(Metallic Base) Mo≥99.97

 

4. Physical and Mechanical Properties Of Molybdenum Sputtering Targets For The Semiconductor Industry:
 
Properties Pure Molybdenum Doped Molybdenum High temperature molybdenum alloy
Atomic coefficient 42    
Atomic weight(m) 95.95    
Lattice constant(a) body centered cube 3.14’10-10    
Density(r) 10.2g/cm3    
Melting point(t) 2620±10℃    
Boiling point(t) 4800℃    
Linear expansion coefficient(a1) 20℃ 5.3’10-6/K 5.3’10-6/K 5.3’10-6/K
20-1000℃ 5.8’10-6/K 5.8’10-6/K 5.8’10-6/K
20-1500℃ 6.5’10-6/K 6.5’10-6/K 6.5’10-6/K
Specific heat(u) 20℃ 0.25J/g·K 0.25J/g·K 0.25J/g·K
1000℃ 0.31J/g·K 0.31J/g·K 0.31J/g·K
2000℃ 0.44J/g·K 0.44J/g·K 0.44J/g·K
Thermal conductivity(l) 20℃ 142 W/m·K 142 W/m·K 126 W/m·K
1000℃ 105 W/m·K 105 W/m·K 98 W/m·K
1500℃ 88 W/m·K 88 W/m·K 86 W/m·K
Resistivity(r) 20℃ 0.052mWm 0.065mWm 0.055mWm
1000℃ 0.27mWm 0.28mWm 0.31mWm
1500℃ 0.43mWm 0.43mWm 0.45mWm
2000℃ 0.60mWm 0.63mWm 0.66mWm
Radiant energy 730℃ 5500.0W/m2    
1330℃ 6300.0W/m2    
1730℃ 19200.0W/m2    
2330℃ 700000.0W/m2    
Thermal Neutron Absorption Cross Section 2.7’10-28m2 2.7’10-28m2 2.7’10-28m2
Tensile strength(Sb) 0.10-8.00mm plate 590~785MPa 450~520MPa 690~1130MPa
f0.80 wire 1020MPa 1570MPa  
Yield Strength(S0.2) 0.10-8.00mm plate 540~620MPa 290~360MPa 620~1000MPa
Elongation(%) 0.10-8.00mm plate 3~17 15~75 2~8
f0.80 wire 1.5 2  
Elastic Modulus(E) 20℃ 320GPa 320GPa 320GPa
1000℃ 270GPa 270GPa 270GPa
Hardness(HV10) <70% Deformation plate 200~280   240~340
>70% Deformation plate 260~360   300~450
Recrystallized plate 140~160 170~190 <200
Plastic-brittle transition temperature(T) -40~40℃
Initial recrystallization temperature(T) >90%Deformation plate 1h Annealed 900℃ 1400℃ 1250℃
final recrystallization temperature(T) Annealed by 1 1200℃ 1700℃ 1600℃

 

5. Features Of Molybdenum Sputtering Targets For The Semiconductor Industry:

 

The sputtered coating adheres to the substrate better than conventional deposition techniques, and materials with very high melting temperatures, like molybdenum and tungsten, are very simple to sputter. Additionally, whereas evaporation can only be done from bottom to top, sputtering can be done both ways.

 

Sputtering targets are frequently rounded or rectangular, although there are also square and triangular options available. The substrate is the item that needs to be coated, and it might be anything from solar cells to optical components to semiconductor wafers. The coating typically ranges in thickness from angstroms to microns. The membrane may consist of a single material or several materials stacked in layers.

 

High purity, high density, fine, and consistent grain properties are present in molybdenum sputtering targets, resulting in extremely high sputtering efficiency, homogeneous film thickness, and a clean etching surface throughout the sputtering process.

 

20mm Molybdenum Sputtering Targets For The Semiconductor Industry Molybdenum Target Molybdenum Disc molybdenum products 2

 

 


 

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